Nexperia
PMV52ENE
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-20
20
V
VGS = 10 V; Tamb = 25 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
-
3.2
13
A
IDM
peak drain current
total power dissipation
-
A
Ptot
[2]
[1]
-
630
1.25
5.7
175
175
175
mW
W
-
Tsp = 25 °C
-
W
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
1.3
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
aaa-026120
aaa-026121
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
25
125
225
25
125
225
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
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PMV52ENE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
29 November 2021
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