Nexperia
PMV52ENE
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
1
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.5
2.5
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 3.2 A; Tj = 25 °C
VGS = 10 V; ID = 3.2 A; Tj = 175 °C
VGS = 4.5 V; ID = 2.7 A; Tj = 25 °C
VDS = 10 V; ID = 3.2 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
S
-
10
-10
2
-
-
-
-2
RDSon
drain-source on-state
resistance
52
93
70
5
70
124
100
-
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
2
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
2.2
0.3
0.6
100
30
3.3
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
19
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
2
-
-
-
-
ns
ns
ns
ns
13
6
turn-off delay time
fall time
3
Source-drain diode
VSD
source-drain voltage
IS = 1.3 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
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PMV52ENE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
29 November 2021
6 / 15
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