NXP Semiconductors
Product data sheet
15 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2515M
MLE099
MLE103
2
10
1
handbook, halfpage
handbook, halfpage
(1)
(3)
(2)
I
C
R
(A)
0.8
CEsat
(Ω)
(4)
(5)
10
(6)
(7)
0.6
0.4
(1)
(3)
(8)
(9)
(2)
1
(10)
0.2
−1
10
10
0
0
−1
2
3
1
10
10
10
0.5
1
1.5
2
I
(mA)
V
(V)
C
CE
Tamb = 25 °C.
IC/IB = 20.
(1) IB = 7 mA.
(5) IB = 4.2 mA.
(6) IB = 3.5 mA.
(9) IB = 1.4 mA.
(10) IB = 0.7 mA.
(1) Tamb = 150 °C.
(2) IB = 6.3 mA.
(2)
Tamb = 25 °C.
(3)
I
B = 5.6 mA.
(7)
IB = 2.8 mA.
(3) Tamb = −55 °C.
(4) IB = 4.9 mA.
(8) IB = 2.1 mA.
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
2003 Sep 15
6
NEXPERIA [ Nexperia ]
