NXP Semiconductors
Product data sheet
15 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2515M
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board requirements.
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
15
V
500
1
mA
A
ICM
RCEsat
<500
mΩ
APPLICATIONS
PINNING
• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
PIN
1
DESCRIPTION
base
2
emitter
collector
3
– LCD backlighting.
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
3
2
handbook, halfpage
2
DESCRIPTION
1
3
1
Low VCEsat NPN transistor in a SOT883 leadless ultra
small plastic package.
Bottom view
MAM475
PNP complement: PBSS3515M.
MARKING
TYPE NUMBER
PBSS2515M
MARKING CODE
Fig.1 Simplified outline (SOT883) and symbol.
S2
2003 Sep 15
2
NEXPERIA [ Nexperia ]
