NXP Semiconductors
Product data sheet
15 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2515M
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 15 V; IE = 0
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
100
50
nA
μA
nA
VCB = 15 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
−
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
−
100
−
VCE = 2 V; IC = 10 mA
200
150
90
−
−
VCE = 2 V; IC = 100 mA; note 1
VCE = 2 V; IC = 500 mA; note 1
−
−
−
−
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
IC = 200 mA; IB = 10 mA; note 1
−
25
mV
mV
mV
mΩ
V
−
−
150
250
<500
1.1
0.9
−
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
VCE = 2 V; IC = 100 mA; note 1
−
−
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
−
360
−
−
−
−
V
IC = 100 mA; VCE = 5 V;
f = 100 MHz
250
420
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
4.4
6
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Sep 15
4
NEXPERIA [ Nexperia ]
