NXP Semiconductors
Product data sheet
15 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2515M
MLE098
MLE100
600
1200
handbook, halfpage
handbook, halfpage
V
(1)
BE
(mV)
1000
h
FE
(1)
(2)
400
800
600
(2)
200
(3)
(3)
400
200
0
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 2 V.
(1) amb = 150 °C.
VCE = 2 V.
T
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MLE102
MLE101
3
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
1000
V
CEsat
(mV)
(1)
2
10
800
(2)
(1)
600
(2)
(3)
10
(3)
400
200
1
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Sep 15
5
NEXPERIA [ Nexperia ]
