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NT5CB512M8DP-EKB 参数 Datasheet PDF下载

NT5CB512M8DP-EKB图片预览
型号: NT5CB512M8DP-EKB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
Mode Register MR3  
The Mode Register MR3 controls Multi-purpose registers. The Mode Register 3 is written by asserting low on , RA, A,  
WE high on BA1 and BA0, and low on BA2 while controlling the states of address pins according to the table below.  
MR3 Definition  
BA2 BA1 BA0  
A15-A13  
A12 A11 A10 A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
MR select  
0
MPR Loc  
0
MPR  
MPR  
MPR Loc  
Predefined pattern  
Reserved  
A2  
0
1
A1  
0
0
A0  
0
1
Normal operation  
Dataflow from MPR  
Reserved  
1
0
Reserved  
BA1 BA0 MR select  
1
1
0
0
1
1
0
1
0
1
MR0  
MR1  
MR2  
MR3  
* 1 : BA2, A3 - A15 are RFU and must be programmed to 0 during MRS.  
* 2 : The predefined pattern will be used for read synchronization.  
* 3 : When MPR control is set for normal operation (MR3 A[2] = 0) then MR3 A[1:0] will be ignored.  
Version 2.3  
02/2017  
27  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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