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NT5CB512M8DP-EKB 参数 Datasheet PDF下载

NT5CB512M8DP-EKB图片预览
型号: NT5CB512M8DP-EKB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
Write leveling  
For better signal integrity, DDR3(L) memory module adopted fly by topology for the commands, addresses, control signals,  
and clocks. The fly by topology has benefits from reducing number of stubs and their length but in other aspect, causes  
flight time skew between clock and strobe at every DRAM on DIMM. It makes difficult for the Controller to maintain tDQSS,  
tDSS, and tDSH specification. Therefore, the controller should support ‘write leveling’ in DDR3(L) SDRAM to compensate  
for skew.  
Output Disable  
The DDR3(L) SDRAM outputs maybe enable/disabled by MR1 (bit12) as shown in MR1 definition. When this feature is  
enabled (A12=1) all output pins (DQs, DQS, , etc.) are disconnected from the device removing any loading of the  
output drivers. This feature may be useful when measuring modules power for example. For normal operation A12 should  
be set to ‘0’.  
TDQS, T  
TDQS (Termination Data Strobe) is a feature of x8 DDR3(L) SDRAM that provides additional termination resistance outputs  
that may be useful in some system configurations.  
When enabled via the mode register, the same termination resistance function is applied to be TDQS/T pins that are  
applied to the DQS/ pins.  
In contrast to the RDQS function of DDR2 SDRAM, TDQS provides the termination resistance function only. The data  
strobe function of RDQS is not provided by TDQS.  
The TDQS and DM functions share the same pin. When the TDQS function is enabled via the mode register, the DM  
function is not supported. When the TDQS function is disabled, the DM function is provided and the T pin is not used.  
The TDQS function is available in x8 DDR3(L) SDRAM only and must be disabled via the mode register A11=0 in MR1 for  
x16 configurations.  
TDQS, T Function Matrix  
MR1 (A11)  
DM / TDQS  
DM  
NU / TDQS  
Hi-Z  
0 (TDQS Disabled)  
1 (TDQS Enabled)  
TDQS  
T  
Note:  
1. If TDQS is enabled, the DM function is disabled.  
2. When not used, TDQS function can be disabled to save termination power.  
3. TDQS function is only available for x8 DRAM and must be disabled for x16.  
Version 2.3  
02/2017  
24  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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