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NT5CB512M8DP-EKB 参数 Datasheet PDF下载

NT5CB512M8DP-EKB图片预览
型号: NT5CB512M8DP-EKB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
Multi-Purpose Register (MPR)  
The Multi Purpose Register (MPR) function is used to Read out a predefined system timing calibration bit sequence.  
Fig. 1: MPR Block Diagram  
To enable the MPR, a MODE Register Set (MRS) command must be issued to MR3 Register with bit A2 = 1, prior to issuing  
the MRS command, all banks must be in the idle state (all banks precharged and tRP met). Once the MPR is enabled, any  
subsequent RD or RDA commands will be redirected to the Multi Purpose Register. The resulting operation, when a RD or  
RDA command is issued, is defined by MR3 bits A[1:0] when the MPR is enabled as shown. When the MPR is enabled,  
only RD or RDA commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3 bit A2 =  
0). Note that in MPR mode RDA has the same functionality as a READ command which means the auto precharge part of  
RDA is ignored. Power-Down mode, Self-Refresh and any other non-RD/RDA command is not allowed during MPR enable  
mode. The RESET function is supported during MPR enable mode.  
Version 2.3  
02/2017  
28  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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