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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
ODT during Reads:  
As the DDR3(L) SDRAM cannot terminate and drive at the same time, RTT must be disabled at least half a clock cycle  
before the read preamble by driving the ODT pin low appropriately. RTT may not be enabled until the end of the post-amble  
as shown in the following figure. DRAM turns on the termination when it stops driving which is determined by tHZ. If DRAM  
stops driving early (i.e. tHZ is early), then tAONmin time may apply. If DRAM stops driving late (i.e. tHZ is late), then DRAM  
complies with tAONmax timing. Note that ODT may be disabled earlier before the Read and enabled later after the Read  
than shown in this example.  
ODT must be disabled externally during Reads by driving ODT low. (Example: CL=6;  
AL=CL-1=5; RL=AL+CL=11; CWL=5; ODTLon=CWL+AL-2=8; ODTLoff=CWL+AL-2=8)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
T15  
T16  
CK  
CK  
CMD  
Read  
Valid  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Address  
ODT  
RL = AL + CL  
ODTLon = CWL + AL - 2  
ODTLoff = CWL + AL - 2  
RTTR_TNTOM  
tAONmax  
tAOFmin  
DRAM  
ODT  
RTT_NOM  
tAOFmax  
DQSdiff  
Din  
b
Din  
b+1  
Din  
b+2  
Din  
b+3  
Din  
b+4  
Din  
b+5  
Din  
b+6  
Din  
b+7  
DQ  
Version 1.4  
05/2019  
70  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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