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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
ODT Timing Diagrams  
Dynamic ODT: Behavior with ODT being asserted before and after the write  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
T15  
T16  
T17  
CK  
CK  
CMD  
NOP  
NOP  
NOP  
NOP  
WRS4  
Valid  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Address  
ODT  
ODTLoff  
ODTH4  
tAOFmin  
ODTLcwn4  
tADCmin  
tADCmin  
tAONmin  
RTT_Nom  
RTT_WR  
RTT_Nom  
RTT  
tAOFmax  
tAONmax  
tADCmax  
tADCmax  
ODTLon  
ODTLcnw  
ODTH4  
DQS/DQS  
WL  
Din  
n
Din  
n+1  
Din  
n+2  
Din  
n+3  
DQ  
Do not  
care  
Transitioning  
Note: Example for BC4 (via MRS or OTF), AL=0, CWL=5. ODTH4 applies to first registering ODT high and to the registration of the Write  
command. In this example ODTH4 would be satisfied if ODT went low at T8. (4 clocks after the Write command).  
Dynamic ODT: Behavior without write command, AL=0, CWL=5  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
CK  
CK  
CMD  
Valid  
Valid  
Valid  
Valid  
Valid  
Valid  
Valid  
Valid  
Valid  
Valid  
Valid  
Valid  
Address  
ODT  
ODTLoff  
ODTLoff  
ODTH4  
tADCmin  
tAONmin  
RTT_Nom  
RTT  
tADCmax  
tAONmax  
ODTLon  
DQS/DQS  
DQ  
Do not  
care  
Transitioning  
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied; ODT registered low at  
T5 would also be legal.  
Version 1.4  
05/2019  
73  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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