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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Timing Parameters  
In synchronous ODT mode, the following timing parameters apply: ODTLon, ODTLoff, tAON min/max, tAOF min/max.  
Minimum RTT turn-on time (tAON min) is the point in time when the device leaves high impedance and ODT resistance begins  
to turn on. Maximum RTT turn-on time (tAON max) is the point in time when the ODT resistance is fully on. Both are measured  
from ODTLon.  
Minimum RTT turn-off time (tAOF min) is the point in time when the device starts to turn off the ODT resistance. Maximum  
RTT turn off time (tAOF max) is the point in time when the on-die termination has reached high impedance. Both are measured  
from ODTLoff.  
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the SDRAM with  
ODT high, then ODT must remain high until ODTH4 (BL=4) or ODTH8 (BL=8) after the write command. ODTH4 and ODTH8  
are measured from ODT registered high to ODT registered low or from the registration of a write command until ODT is  
registered low.  
Synchronous ODT Timing Example for AL=3; CWL=5; ODTLon=AL+CWL-2=6;  
ODTLoff=AL+CWL-2=6  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
T15  
CK  
CK  
CKE  
ODT  
tAONmax  
tAONmin  
AL=3  
ODTH4, min  
AL=3  
CWL - 2  
tAONmax  
ODTLon = CWL + AL -2  
tAONmin  
ODTLoff = CWL + AL -2  
RTT_NOM  
DRAM_RTT  
Transitioning  
Do not care  
Synchronous ODT example with BL=4, WL=7  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
T15  
T16  
T17  
T18  
CK  
CK  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
WRS4  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
ODTH4  
ODTH4  
ODT  
ODTH4min  
ODTLoff = WL - 2  
ODTLoff = CWL -2  
tAOFmax  
tAONmax  
tAONmin  
tAOFmax  
tAOFmin  
tAONmin  
tAONmax  
tAOFmin  
DRAM_RTT  
RTT_NOM  
ODTLon = CWL -2  
ODTLon = CWL -2  
Transitioning  
Do not care  
ODT must be held high for at least ODTH4 after assertion (T1); ODT must be kept high ODTH4 (BL=4) or ODTH8 (BL=8)  
after Write command (T7). ODTH is measured from ODT first registered high to ODT first registered low, or from registration  
of Write command with ODT high to ODT registered low. Note that although ODTH4 is satisfied from ODT registered at T6  
ODT must not go low before T11 as ODTH4 must also be satisfied from the registration of the Write command at T7.  
Version 1.4  
05/2019  
69  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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