TYPICAL ELECTRICAL CHARACTERISTICS — MUN5312DW1T1 NPN TRANSISTOR
1000
1
V
= 10 V
CE
I
/I = 10
C B
T
= 75°C
A
25°C
25°C
T
= –25°C
A
0.1
–25°C
75°C
100
0.01
10
0.001
1
10
100
0
20
, COLLECTOR CURRENT (mA)
40
50
I
I
, COLLECTOR CURRENT (mA)
C
C
Figure 12. V
versus I
Figure 13. DC Current Gain
CE(sat)
C
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
= 0 V
T
= –25°C
A
I
E
T
= 25°C
A
0.1
0.01
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
= 0.2 V
O
T
= –25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output
Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data