TYPICAL ELECTRICAL CHARACTERISTICS — MUN5313DW1T1 NPN TRANSISTOR
10
1
1000
V
= 10 V
I
/I = 10
CE
C B
T
= 75°C
A
25°C
–25°C
25°C
100
T
= –25°C
A
75°C
0.1
0.01
10
0
20
, COLLECTOR CURRENT (mA)
40
50
1
10
100
I
I
, COLLECTOR CURRENT (mA)
C
C
Figure 22. V
versus I
Figure 23. DC Current Gain
CE(sat)
C
1
100
10
1
25°C
f = 1 MHz
= 0 V
75°C
I
E
T = –25
°C
0.8
T
= 25
°C
A
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
V , INPUT VOLTAGE (VOLTS)
in
6
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100
V
= 0.2 V
O
T
= –25°C
A
25°C
10
1
75°C
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 26. Input Voltage versus Output Current
8
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MOTOROLA [ MOTOROLA ]
