TYPICAL ELECTRICAL CHARACTERISTICS — MUN5311DW1T1 NPN TRANSISTOR
1
1000
I
/I = 10
V
= 10 V
C B
T
= –25°C
CE
A
25°C
T
= 75
°C
°C
A
25
0.1
–25°C
75°C
100
0.01
0.001
10
0
20
40
, COLLECTOR CURRENT (mA)
50
1
10
100
I
I
, COLLECTOR CURRENT (mA)
C
C
Figure 2. V
versus I
Figure 3. DC Current Gain
CE(sat)
C
4
3
100
10
25°C
75°C
f = 1 MHz
= 0 V
I
E
T
= –25°C
A
T
= 25°C
A
1
0.1
2
1
0
0.01
0.001
V
= 5 V
9
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
= 0.2 V
T
= –25°C
O
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MOTOROLA [ MOTOROLA ]
