TYPICAL ELECTRICAL CHARACTERISTICS — MUN5313DW1T1 PNP TRANSISTOR
1
1000
I
/I = 10
C B
T
= 75°C
A
T
= –25°C
A
25°C
25°C
75°C
–25°C
100
0.1
0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
C
100
I
, COLLECTOR CURRENT (mA)
C
Figure 27. V
versus I
Figure 28. DC Current Gain
CE(sat)
C
1
100
25°C
T
= 75°C
A
f = 1 MHz
= 0 V
l
E
0.8
–25°C
10
1
T
= 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
5
O
0.001
0
10
20
30
40
50
0
1
2
3
4
6
7
8
9
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100
10
V
= 0.2 V
O
T
= –25°C
A
25
°C
75°C
1
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 31. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
9
MOTOROLA [ MOTOROLA ]
