TYPICAL ELECTRICAL CHARACTERISTICS — MUN5314DW1T1 NPN TRANSISTOR
1
0.1
300
T
= 75°C
A
V
= 10
I
/I = 10
CE
C B
T
= –25°C
250
200
150
A
25°C
25°C
–25°C
75°C
0.01
100
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I
, COLLECTOR CURRENT (mA)
C
Figure 32. V
versus I
Figure 33. DC Current Gain
CE(sat)
C
4
3.5
3
100
10
1
f = 1 MHz
= 0 V
T
A
= 75°C
25°C
l
E
T
= 25°C
A
–25°C
2.5
2
1.5
1
0.5
0
V
= 5 V
O
0
2
4
6
8
10 15 20
25 30
35 40 45 50
0
2
4
6
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10
V
= 0.2 V
O
T
= –25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 36. Input Voltage versus Output Current
10
Motorola Small–Signal Transistors, FETs and Diodes Device Data