ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q , – minus sign for Q (PNP) omitted)
A
1
2
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
= 50 V, I = 0)
I
I
—
—
—
—
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V
= 50 V, I = 0)
B
CE
CEO
Emitter-Base Cutoff Current
MUN5311DW1T1
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
EBO
(V
EB
= 6.0 V, I = 0)
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
C
Collector-Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
—
—
—
—
Vdc
Vdc
C
E
(BR)CBO
(3)
Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0)
C
B
(BR)CEO
(3)
ON CHARACTERISTICS
DC Current Gain
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
h
FE
35
60
80
60
—
—
—
—
—
—
—
—
—
—
—
—
(V
CE
= 10 V, I = 5.0 mA)
100
140
140
350
350
5.0
15
C
80
160
160
3.0
8.0
15
80
80
80
30
200
150
140
Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
—
—
0.25
Vdc
Vdc
C
B
(I = 10 mA, I = 5 mA) MUN5330DW1T1/MUN5331DW1T1
C
B
(I = 10 mA, I = 1 mA) MUN5315DW1T1/MUN5316DW1T1
C
B
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
V
OL
MUN5311lDW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5313DW1T1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V
CC
= 5.0 V, V = 3.5 V, R = 1.0 kΩ)
B L
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MOTOROLA [ MOTOROLA ]
