<IGBT Modules>
CM100MXUB-13T1/CM100MXUBP-13T1
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
25,26
25,26
25,26
25,26
IF
VGE=15 V
VGE=15 V
VGE=15 V
IC
IC
IC
7
10
15
8,9
11,12
13,14
V
V
V
27
8,9
11,12
23,24
13,14
23,24
V
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
22
20
21
20
19
20
18
20
23,24
23,24
Brake DIODE
TrUP
TrVP
TrWP
25,26
25,26
25,26
25,26
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
7
10
11,12
15
13,14
V
V
V
V
8,9
8,9
11,12
23,24
13,14
23,24
27
VGE=15 V
VGE=15 V
VGE=15 V
VGE=15 V
IC
IC
IC
IC
21
20
19
20
18
20
22
20
23,24
23,24
TrUN
TrVN
TrWN
Brake IGBT
Gate-emitter GVP-V, GVN-E,
short-circuited GWP-W, GWN-E
GB-E
Gate-emitter GUP-U, GUN-E,
short-circuited GWP-W, GWN-E
GB-E
Gate-emitter GUP-U, GUN-E,
short-circuited GVP-V, GVN-E
GB-E
Gate-emitter GUP-U, GUN-E,
short-circuited GVP-V, GVN-E,
GWP-W, GWN-E
VCEsat /BRAKE DIODE VF characteristics test circuit
28,29
25,26
25,26
25,26
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
IF
IE
IE
IE
7
10
15
8,9
11,12
13,14
V
V
V
1,2
V
8,9
11,12
23,24
13,14
23,24
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
21
19
20
18
20
30,31
23,24
25,26
20
DiUP
DiVP
DiWP
25,26
25,26
28,29
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
7
10
11,12
15
V
V
V
V
8,9
13,14
8,9
11,12
23,24
13,14
23,24
1,2
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
IE
IE
IE
IF
21
20
19
20
18
20
23,24
30,31
DiUN
DiVN
DiWN
CONVERTER DIODE (ex.phase-R)
Gate-emitter GVP-V, GVN-E,
short-circuited GWP-W, GWN-E
GB-E
Gate-emitter GUP-U, GUN-E,
short-circuited GWP-W, GWN-E
GB-E
Gate-emitter GUP-U, GUN-E,
short-circuited GVP-V, GVN-E
GB-E
VEC / CONVERTER DIODE VF characteristics test circuit
Publication Date : June 2018
CMH-11887
10
Ver.1.0
MITSUBISHI [ Mitsubishi Group ]
