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CM100MXUBP-13T1 参数 Datasheet PDF下载

CM100MXUBP-13T1图片预览
型号: CM100MXUBP-13T1
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor,]
分类和应用:
文件页数/大小: 20 页 / 1993 K
品牌: MITSUBISHI [ Mitsubishi Group ]
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<IGBT Modules>  
CM100MXUB-13T1/CM100MXUBP-13T1  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
ELECTRICAL CHARACTERISTICS (cont.; Tvj=25 °C, unless otherwise specified)  
BRAKE PART IGBT/DIODE  
Limits  
Typ.  
1.4  
3.1  
3.2  
0
Symbol  
Item  
Conditions  
Unit  
mJ  
Min.  
Max.  
Eon  
Turn-on switching energy per pulse  
Turn-off switching energy per pulse  
Reverse recovery energy per pulse  
Internal gate resistance  
VCC=300 V, VGE=±15 V,  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IC=75 A, RG=10 Ω  
IE=75 A, RG=10 Ω  
Eoff  
Err  
Tvj=150 °C, Inductive load  
-
-
rg  
-
-
Ω
IRRM  
Reverse current  
VR=VRRM, G-E short-circuited  
IF=50 A, G-E short-circuited,  
-
1.0  
mA  
Tvj=25 °C  
Tvj=125 °C  
Tvj=150 °C  
Tvj=25 °C  
1.70  
1.80  
1.85  
1.60  
1.70  
1.70  
-
2.30  
VF  
(Terminal)  
Refer to the figure of test circuit  
-
V
V
(Note5)  
-
2.0  
-
Forward voltage  
IF=50 A,  
VF  
(Chip)  
G-E short-circuited,  
(Note5)  
Tvj=125 °C  
Tvj=150 °C  
-
trr  
Reverse recovery time  
VCC=300 V, IF=50 A, VGE=±15 V,  
400  
-
ns  
Qr r  
Reverse recovery charge  
RG=15 Ω, Inductive load  
5.0  
μC  
CONVERTER PART DIODE  
Symbol Item  
Limits  
Typ.  
-
Conditions  
Unit  
mA  
Min.  
Max.  
20  
IRRM  
Repetitive peak reverse current  
VR=VRRM, Tvj=150 °C  
IF=100A  
-
-
Tvj=25 °C  
1.35  
1.80  
VF  
(Terminal)  
Tvj=150 °C  
Tvj=25 °C  
Tvj=150 °C  
-
-
-
1.30  
1.20  
1.15  
-
1.45  
-
Forward voltage  
V
VF  
(chip)  
NTC THERMISTOR PART  
Symbol Item  
Limits  
Typ.  
5.00  
-
Conditions  
Unit  
Min.  
4.85  
-7.3  
-
Max.  
5.15  
+7.8  
-
(Note4)  
R25  
Zero-power resistance  
Deviation of resistance  
B-constant  
TC=25 °C  
kΩ  
%
(Note4)  
(Note6)  
ΔR/R  
B(25/50)  
P25  
R100=493 Ω, TC=100 °C  
Approximate by equation  
3375  
-
K
(Note4)  
Power dissipation  
TC=25 °C  
-
10  
mW  
THERMAL RESISTANCE CHARACTERISTICS  
Limits  
Symbol  
Item  
Conditions  
Unit  
Min.  
Typ.  
Max.  
458  
(Note4)  
(Note4)  
Rt h(j -c)Q  
Rt h(j -c ) D  
Rt h(j -c)Q  
Rt h(j -c )D  
Rt h(j -c ) D  
Junction to case, per Inverter IGBT  
Junction to case, per Inverter FWD  
-
-
-
-
-
-
-
-
594  
(Note4)  
Thermal resistance  
Junction to case, Brake IGBT  
Junction to case, Brake DIODE  
554  
K/kW  
K/kW  
(Note4)  
1346  
(Note4)  
Junction to case, per Converter DIODE  
650  
(Note4, 7)  
Case to heat sink,  
per 1 module,  
Thermal grease applied  
-
-
20.2  
5.5  
-
-
Rt h( c- s)  
Contact thermal resistance  
(Note4, 8)  
PC-TIM applied  
Publication Date : June 2018  
CMH-11887  
6
Ver.1.0