<IGBT Modules>
CM100MXUB-13T1/CM100MXUBP-13T1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, RG=6.8 Ω, VGE=±15 V, INDUCTIVE LOAD
VCC=300 V, IC=100 A, VGE=±15 V, INDUCTIVE LOAD
-----------------: Tv j=150 °C, - - - - -: Tv j=125 °C
-----------------: Tv j=150 °C, - - - - -: Tv j=125 °C
tf
td(off)
td(on)
td(off)
tf
td(on)
tr
tr
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, RG=6.8 Ω, VGE=±15 V, INDUCTIVE LOAD,
-----------------: Tv j=150 °C, - - - - -: Tv j=125 °C, PER PULSE
VCC=300 V, IC/IE=100 A, VGE=±15 V, INDUCTIVE LOAD,
-----------------: Tv j=150 °C, - - - - -: Tv j=125 °C, PER PULSE
Eo n
Eo ff
Eo n
Er r
Eo ff
Er r
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
EXTERNAL GATE RESISTANCE RG (Ω)
Publication Date : June 2018
CMH-11887
12
Ver.1.0