<IGBT Modules>
CM100MXUB-13T1/CM100MXUBP-13T1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
Tv j=25 °C
(chip)
VGE=15 V
(chip)
VGE=20 V
15 V
Tv j=150 °C
13.5 V
12 V
Tv j=125 °C
11 V
10 V
Tv j=25 °C
8 V
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
Tv j=125 °C
(chip)
Tv j=25 °C
(chip)
IC=200 A
IC=100 A
Tv j=150 °C
IC=50 A
Tv j=25 °C
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
Publication Date : June 2018
CMH-11887
11
Ver.1.0