MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21265-P/AP
TRANSFER-MOLD TYPE
INSULATED TYPE
MAXIMUM RATINGS
(T
j
= 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CC
V
CC(surge)
V
CES
±I
C
±I
CP
P
C
T
j
Parameter
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Condition
Applied between P-N
Applied between P-N
T
C
= 25°C
T
C
= 25°C, less than 1ms
T
C
= 25°C, per 1 chip
(Note 1)
Ratings
450
500
600
20
40
51.2
–20~+125
Unit
V
V
V
A
A
W
°C
Note 1 :
The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ T
C
≤
100°C) however, to in-
sure safe operation of the DIP-IPM, the average junction temperature should be limited to T
j(ave)
≤
125°C (@ T
C
≤
100°C).
CONTROL (PROTECTION) PART
Symbol
V
D
V
DB
V
IN
V
FO
I
FO
V
SC
Parameter
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Condition
Applied between V
P1
-V
PC
, V
N1
-V
NC
Applied between V
UFB
-V
UFS
, V
VFB
-V
VFS
,
V
WFB
-V
WFS
Applied between U
P
, V
P
, W
P
-V
PC
, U
N
, V
N
,
W
N
-V
NC
Applied between F
O
-V
NC
Sink current at F
O
terminal
Applied between CIN-V
NC
Ratings
20
20
–0.5~V
D
+0.5
–0.5~V
D
+0.5
1
–0.5~V
D
+0.5
Unit
V
V
V
V
mA
V
TOTAL SYSTEM
Parameter
Self protection supply voltage limit
V
CC(PROT)
(short circuit protection capability)
Module case operation temperature
T
C
T
stg
Storage temperature
V
iso
Isolation voltage
Symbol
Condition
V
D
= 13.5~16.5V, Inverter part
T
j
= 125°C, non-repetitive, less than 2
µs
(Note 2)
60Hz, Sinusoidal, AC 1 minute, connecting
pins to heat-sink plate
Ratings
400
–20~+100
–40~+125
2500
Unit
V
°C
°C
V
rms
Note 2 :
T
C
measurement point
Control terminals
Heat sink
T
C
T
C
Heat sink boundary
Power terminals
Oct. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
