MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21265-P/AP
TRANSFER-MOLD TYPE
INSULATED TYPE
[C] Under-Voltage Protection (Upper-arm, UV
DB
)
c1. Control supply voltage rises : Operation starts soon after UV
DBr
.
c2. Normal operation : IGBT ON and carrying current.
c3. Under voltage trip (UV
DBt
).
c4. IGBT OFF in spite of control input condition, but there is no F
O
signal output.
c5. Under voltage reset (UV
DBr
).
c6. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state
Control supply voltage V
DB
RESET
UV
DBr
c1
c2
UV
DBt
c3
SET
RESET
c6
c4
c5
c7
Output current Ic
Error output Fo
High-level (no fault output)
Fig. 8 RECOMMENDED MCU I/O INTERFACE CIRCUIT
5V line
10kΩ
DIP-IPM
U
P
,V
P
,W
P
,U
N
,V
N
,W
N
MCU
Fo
V
NC
(Logic)
Note :
RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in
the application and the wiring impedance of the application’s printed circuit board.
The DIP-IPM input signal section integrates a 2.5kΩ(min) pull-down resistor. Therefore, if using external RC
filter, pay attention to satisfy the turn-on/off threshold voltage requirement.
Fig. 9 RECOMMENDED WIRING OF SHUNT RESISTOR
DIP-IPM
Wiring inductance should be less than 10nH.
width=3mm, thickness=100µm, length=17mm
in copper pattern (rough standard)
V
NC
N
Shunt resistor
Please make the connection point
as close as possible to the terminal
of shunt resistor.
Oct. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
