MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21265-P/AP
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 7 TIMING CHARTS OF THE DIP-IPM PROTECTIVE FUNCTIONS
[A] Short-Circuit Protection (Lower-arms only) (with external shunt resistor and CR connection)
a1. Normal operation : IGBT ON and carrying current.
a2. Short circuit current detection (SC trigger).
a3. Hard IGBT gate interrupt.
a4. IGBT turns OFF.
a5. F
O
timer operation starts : The pulse width of the F
O
signal is set by the external capacitor C
FO
.
a6. Input “L” : IGBT OFF state.
a7. Input “H” : IGBT ON state, but during the F
O
signal active period the IGBT doesn’t turn ON.
a8. IGBT OFF in spite of “H” input.
Lower-arms control
input
Protection circuit state
SET
a6 a7
RESET
Internal IGBT gate
a2
a1
Output current Ic
Sense voltage of the
shunt resistance
SC
a3
a4
a8
SC reference voltage
CR circuit time
constant DELAY
Error output Fo
a5
[B] Under-Voltage Protection (Lower-arm, UV
D
)
b1. Control supply voltage rises : After the voltage reaches UV
Dr
level, the circuits start to operate when the next input is applied.
b2. Normal operation : IGBT ON and carrying current.
b3. Under voltage trip (UV
Dt
).
b4. IGBT OFF in spite of control input condition.
b5. F
O
operation starts. The minimum pulse width of F
O
is set by the external capacitor C
FO
, and F
O
outputs continuously during UV period.
b6. Under voltage reset (UV
Dr
).
b7. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state
UV
Dr
RESET
SET
RESET
b6
Control supply voltage V
D
b1
UV
Dt
b3
b4
b2
Output current Ic
b7
Error output Fo
b5
Oct. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
