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PC28F128G18FF 参数 Datasheet PDF下载

PC28F128G18FF图片预览
型号: PC28F128G18FF
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB, 256MB,512MB ,1GB的StrataFlash存储器 [128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory]
分类和应用: 存储
文件页数/大小: 118 页 / 1154 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory  
Bus Interface  
Write  
CE# LOW and WE# LOW place the device in bus write mode, where RST# and OE# must  
be HIGH, CLK and ADV# are ignored, input data and address are sampled on the rising  
edge of WE# or CE#, whichever occurs first.  
During a write operation in muxed devices, address is latched during the rising edge of  
ADV# OR CE# whichever occurs first and Data is latched during the rising edge of WE#  
OR CE# whichever occurs first.  
Bus WRITE cycles are asynchronous only.  
The following conditions apply when a bus WRITE cycle occurs immediately before, or  
immediately after, a bus READ cycle:  
• When transitioning from a bus READ cycle to a bus WRITE cycle, CE# or ADV# must  
toggle after OE# goes HIGH.  
• When in synchronous read mode (RCR15 = 0; burst clock running), bus WRITE cycle  
t
timings tVHWL (ADV# HIGH to WE# LOW), CHWL (CLK HIGH to WE# LOW), and  
tWHCH (WE# HIGH to CLK HIGH) must be met.  
• When transitioning from a bus WRITE cycle to a bus READ cycle, CE# or ADV# must  
toggle after WE# goes HIGH.  
PDF: 09005aef8448483a  
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2011 Micron Technology, Inc. All rights reserved.