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PC28F128G18FF 参数 Datasheet PDF下载

PC28F128G18FF图片预览
型号: PC28F128G18FF
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB, 256MB,512MB ,1GB的StrataFlash存储器 [128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory]
分类和应用: 存储
文件页数/大小: 118 页 / 1154 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory  
Command Definitions  
Table 7: Command Set (Continued)  
Code  
Command  
(Setup/Confirm)  
Description  
BUFFERED ENHANCED FACTORY  
PROGRAM  
0080h/00D0h  
Initiates and executes a BUFFERED ENHANCED FACTORY PRO-  
GRAM operation. Additional bus READ/WRITE cycles are re-  
quired after the CONFIRM command to properly perform this  
operation. The addressed partition automatically switches to  
read status register mode.  
Block Erase Operations  
BLOCK ERASE  
0020h/00D0h  
Erases a single, addressed block. The ERASE operation commen-  
ces when the CONFIRM command is issued. The addressed parti-  
tion automatically switches to read status register mode.  
Security Operations  
Lock Block  
0060h/0001h  
0060h/00D0h  
0060h/002Fh  
Sets the lock bit of the addressed block.  
Clears the lock bit of the addressed block.  
Sets the lock-down bit of the addressed block.  
Unlock Block  
Lock-Down Block  
Other Operations  
SUSPEND  
00B0h  
Initiates a suspend of a PROGRAM or BLOCK ERASE operation  
already in progress when issued to any device address  
SR[6] = 1 indicates erase suspend  
SR[2] = 1 indicates program suspend  
RESUME  
00D0h  
Resumes a suspended PROGRAM or BLOCK ERASE operation  
when issued to any device address. A program suspend nested  
within an erase suspend is resumed first.  
BLANK CHECK  
00BCh/00D0h  
Performs a blank check of an addressed block. The addressed  
partition automatically switches to read status register mode.  
PDF: 09005aef8448483a  
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2011 Micron Technology, Inc. All rights reserved.  
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