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N25Q512A13GF840E 参数 Datasheet PDF下载

N25Q512A13GF840E图片预览
型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory  
ADDRESS MODE Operations – Enter and Exit 4-Byte Address  
Mode  
ADDRESS MODE Operations – Enter and Exit 4-Byte Address Mode  
ENTER or EXIT 4-BYTE ADDRESS MODE Command  
Both ENTER 4-BYTE ADDRESS MODE and EXIT 4-BYTE ADDRESS MODE commands  
share the same requirements.  
To enter or exit the 4-byte address mode, the WRITE ENABLE command must be execu-  
ted to set the write enable latch bit to 1.  
Note: The WRITE ENABLE command must not be executed on the N25Q512A83G1241E  
and N25Q512A83G1241F devices.  
S# must be driven LOW. The command must be input on DQn. The effect of the com-  
mand is immediate; after the command has been executed, the write enable latch bit is  
cleared to 0.  
The default address mode is three bytes, and the device returns to the default upon exit-  
ing the 4-byte address mode.  
ENTER or EXIT QUAD Command  
The ENTER or EXIT QUAD (QPI) command is available only on the N25Q512A83G1241E  
and N25Q512A83G1241F devices.  
To initiate this command, S# must be driven LOW, and the command must be input on  
DQn. The effect of the command is immediate.  
Note: The WRITE ENABLE command must not be executed before this command.  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2011 Micron Technology, Inc. All rights reserved.  
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