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N25Q512A13GF840E 参数 Datasheet PDF下载

N25Q512A13GF840E图片预览
型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory  
Nonvolatile and Volatile Registers  
Table 17: Flag Status Register Bit Definitions (Continued)  
Note 1 applies to entire table  
Bit Name Settings  
Description  
Notes  
0
Addressing  
0 = 3 bytes addressing  
1 = 4 bytes addressing  
Status bit: Indicates whether 3-byte or 4-byte address  
mode is enabled.  
2
1. Register bits are read by READ FLAG STATUS REGISTER command. All bits are volatile.  
2. Status bits are reset automatically.  
Notes:  
3. Error bits must be cleared through the CLEAR FLAG STATUS REGISTER command.  
4. These error flags are "sticky." They must be cleared through the CLEAR STATUS REGIS-  
TER command.  
5. Program or erase controller bit = NOT (write in progress bit).  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
26  
© 2011 Micron Technology, Inc. All rights reserved.  
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