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N25Q512A13GF840E 参数 Datasheet PDF下载

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型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory  
Nonvolatile and Volatile Registers  
Table 16: Enhanced Volatile Configuration Register Bit Definitions (Continued)  
Note 1 applies to entire table  
Bit  
Name  
Settings  
Description  
Notes  
2:0  
Output driver strength 000 = Reserved  
001 = 90 Ohms  
Optimizes impedance at VCC/2 output voltage.  
010 = 60 Ohms  
011 = 45 Ohms  
100 = Reserved  
101 = 20 Ohms  
110 = 15 Ohms  
111 = 30 (Default)  
1. Settings determine the device memory configuration upon a change of those settings by  
the WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command. The register is  
read from or written to in all protocols by READ ENHANCED VOLATILE CONFIGURATION  
REGISTER or WRITE ENHANCED VOLATILE CONFIGURATION REGISTER commands, respec-  
tively.  
Notes:  
2. If bits 6 and 7 are both set to 0, the device operates in quad I/O. When either bit 6 or 7 is  
reset to 0, the device operates in dual I/O or quad I/O respectively following the next  
WRITE ENHANCED VOLATILE CONFIGURATION command.  
Flag Status Register  
Table 17: Flag Status Register Bit Definitions  
Note 1 applies to entire table  
Bit Name  
Settings  
Description  
Notes  
7
Program or  
erase  
controller  
0 = Busy  
1 = Ready  
Status bit: Indicates whether one of the following  
command cycles is in progress: WRITE STATUS  
REGISTER, WRITE NONVOLATILE CONFIGURATION  
REGISTER, PROGRAM, or ERASE.  
2, 5  
6
5
4
Erase suspend 0 = Not in effect  
1 = In effect  
Status bit: Indicates whether an ERASE operation has  
been or is going to be suspended.  
2
Erase  
0 = Clear  
Error bit: Indicates whether an ERASE operation has  
3, 4  
3, 4  
1 = Failure or protection error succeeded or failed.  
Program  
0 = Clear  
Error bit: Indicates whether a PROGRAM operation has  
1 = Failure or protection error succeeded or failed; also an attempt to program a 0 to  
a 1 when VPP = VPPH and the data pattern is a multiple  
of 64 bits.  
3
2
1
VPP  
0 = Enabled  
1 = Disabled (Default)  
Error bit: Indicates an invalid voltage on VPP during a  
PROGRAM or ERASE operation.  
3, 4  
2
Program sus-  
pend  
0 = Not in effect  
1 = In effect  
Status bit: Indicates whether a PROGRAM operation  
has been or is going to be suspended.  
Protection  
0 = Clear  
Error bit: Indicates whether an ERASE or PROGRAM  
3, 4  
1 = Failure or protection error operation has attempted to modify the protected array  
sector, or whether a PROGRAM operation has attemp-  
ted to access the locked OTP space.  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
25  
© 2011 Micron Technology, Inc. All rights reserved.  
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