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N25Q128A11B1241F 参数 Datasheet PDF下载

N25Q128A11B1241F图片预览
型号: N25Q128A11B1241F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位, 1.8 V ,多个I / O , 4 KB的界别分组擦除引导扇区, XIP启用,串行闪存与108 MHz的SPI总线接口 [128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface]
分类和应用: 闪存
文件页数/大小: 185 页 / 5874 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Instructions  
N25Q128 - 1.8 V  
As soon as Chip Select (S) is driven High, the self-timed write NV configuration register  
cycle (whose duration is tnvcr) is initiated.  
While the Write Non Volatile Configuration register cycle is in progress, it is possible to  
monitor the end of the process by polling status Register write in progress (WIP) bit or the  
Flag Status Register Program/Erase Controller bit. The write in progress (WIP) bit is 1  
during the self-timed Write Non Volatile Configuration register cycle, and is 0 when it is  
completed. When the cycle is completed, the write enable latch (WEL) is reset.  
The Write Non Volatile Configuration register (WRNVCR) instruction allows the user to  
change the values of all the Non Volatile Configuration Register bits, described in Table 4.:  
Non-Volatile Configuration Register.  
The Write Non Volatile Configuration Register impacts the memory behavior only after the  
next power on sequence.  
Figure 37. Write NV Configuration Register instruction sequence  
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24  
C
NVCR In  
Instruction  
Byte  
Byte  
0
15 14 13 12  
7
6
5
4
3
2
11 10  
9
8
1
DQ0  
MS Byte  
LS Byte  
High Impedance  
DQ1  
Write_NVCR  
9.1.30  
Read Volatile Configuration Register  
The Read Volatile Configuration Register (RDVCR) instruction allows the Volatile  
Configuration Register to be read. See Table 6.: Volatile Configuration Register.  
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