ADVANCE
128Mb: x16, x32
MOBILE SDRAM
IDD SPECIFICATIONS AND CONDITIONS (x32)
(Notes: 1, 5, 6, 11, 13; notes appear on page 39; VDD = +3.3V 0.3V or 2.5 0.2V, VDDQ = +3.3V 0.3V or +2.5V
0.2V or +1.8V 0.15V )
MAX
PARAMETER/CONDITION
SYMBOL
-8
-10 UNITS NOTES
Operating Current: Active Mode;
Burst = 2; READ or WRITE; RC = RC (MIN)
IDD1
150 120
mA
3, 18,
19, 32
t
t
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
IDD2
IDD3
350 350
µA
32
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after RCD met;
No accesses in progress
40
35
mA
3, 12,
19, 32
t
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
IDD4
115 110
220 180
mA
3, 18,
19, 32
t
t
Auto Refresh Current
CKE = HIGH; CS# = HIGH
RFC = RFC (MIN)
RFC = 15.625µs
IDD5
IDD6
mA
mA
3, 12,
18, 19,
32, 33
t
3
3
IDD7 - SELF REFRESH CURRENT OPTIONS (x32)
(Notes: Note 4 appears on page 39) (VDD = +3.3V 0.3V or 2.5 0.2V, VDDQ) = +3.3V 0.3V or +2.5V 0.2V or
+1.8V 0.15V)
Temperature Compensated Self Refresh
Parameter/Condition
Max
Temperature
-8 and -10
UNITS NOTES
Self Refresh Current:
CKE < 0.2V
85ºC
70ºC
45ºC
15ºC
1000
550
400
350
µA
µA
µA
µA
4
4
4
4
CAPACITANCE
(Note: 2; notes appear on page 39)
PARAMETER
SYMBOL MIN
MAX UNITS NOTES
Input Capacitance: CLK
CI1
CI2
CIO
2.5
2.5
4.0
3.5
3.8
6.0
pF
pF
pF
29
30
31
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
38
MICRON [ MICRON TECHNOLOGY ]
