ADVANCE
128Mb: x16, x32
MOBILE SDRAM
AC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(VDD = +3.3V 0.3V or 2.5 0.2V, VDDQ = +3.3V 0.3V or +2.5V 0.2V or +1.8V 0.15V )
PARAMETER/CONDITION
SYMBOL
VIH
MIN
1.4
–
MAX UNITS NOTES
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
–
V
V
VIL
0.4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 5, 6, 8, 9, 11; notes appear on page 39)
AC CHARACTERISTICS
PARAMETER
Access time from CLK (pos. edge)
-8
-10
SYMBOL MIN
MAX
7
8
MIN MAX UNITS NOTES
CL = 3 tAC (3)
7
8
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
–
27
CL = 2 tAC (2)
CL = 1 tAC (1)
19
22
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
tAH
1
2.5
3
1
2.5
3
tAS
tCH
tCL
3
3
CL = 3 tCK (3)
8
10
12
25
1
23
23
23
CL = 2 tCK (2)
10
20
1
CL = 1 tCK (1)
CKE hold time
tCKH
CKE setup time
tCKS
2.5
1
2.5
1
2.5
1
2.5
1
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time
tCMH
tCMS
tDH
tDS
2.5
2.5
CL = 3 tHZ (3)
7
8
19
7
8
22
10
10
10
CL = 2 tHZ (2)
CL = 1 tHZ (1)
Data-out low-impedance time
Data-out hold time (load)
tLZ
tOH
tOHN
tRAS
tRC
tRCD
tREF
tRFC
tRP
1
1
2.5
1.8
48
80
20
2.5
1.8
50
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
28
120,000
64
120,000
64
100
20
80
20
20
0.5
100
20
20
tRRD
tT
1.2
0.5
1.2
7
24
WRITE recovery time
tWR 1 CLK +
7ns
1 CLK +
5ns
15
80
15
100
ns
ns
25
20
Exit SELF REFRESH to ACTIVE command
tXSR
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
36
MICRON [ MICRON TECHNOLOGY ]
