ADVANCE
128Mb: x16, x32
MOBILE SDRAM
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11; notes appear on page 39)
PARAMETER
SYMBOL
tCCD
tCKED
tPED
tDQD
tDQM
tDQZ
-8
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
-10 UNITS NOTES
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK 15, 21
tCK 16, 21
tCK
tCK
tCK 16, 21
17
14
14
17
17
17
17
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
tDWD
tDAL
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH command
Data-out to high-impedance from PRECHARGE command
tDPL
tBDL
17
17
tCDL
tRDL
tMRD
tROH(3)
tROH(2)
tROH(1)
tCK
tCK
tCK
tCK
26
17
17
17
CL = 3
CL = 2
CL = 1
IDD SPECIFICATIONS AND CONDITIONS (x16)
(Notes: 1, 5, 6, 11, 13; notes appear on page 39; VDD = +3.3V 0.3V or 2.5 0.2V, VDDQ = +3.3V 0.3V or +2.5V
0.2V or +1.8V 0.15V )
MAX
PARAMETER/CONDITION
SYMBOL
-8
-10 UNITS NOTES
Operating Current: Active Mode;
IDD1
130 100
mA
3, 18,
19, 32
t
t
Burst = 2; READ or WRITE; RC = RC (MIN)
Standby Current: Power-Down Mode; All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after RCD met;
No accesses in progress
IDD2
IDD3
350 350
µA
32
35
30
95
mA
3, 12,
19, 32
t
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
IDD4
100
mA
3, 18,
19, 32
t
t
t
Auto Refresh Current
CKE = HIGH; CS# = HIGH
RFC = RFC (MIN)
IDD5
IDD6
210 170
mA
mA
3, 12,
18, 19,
32, 33
RFC = 15.625µs
3
3
IDD7 - SELF REFRESH CURRENT OPTIONS (x16)
(Notes: Note 4 appears on page 39) (VDD = +3.3V 0.3V or 2.5 0.2V, VDDQ) = +3.3V 0.3V or +2.5V 0.2V or
+1.8V 0.15V)
Temperature Compensated Self Refresh
Parameter/Condition
Max
Temperature
-8 and -10
UNITS NOTES
Self Refresh Current:
CKE < 0.2V
85ºC
70ºC
45ºC
15ºC
800
500
350
300
µA
µA
µA
µA
4
4
4
4
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
37
MICRON [ MICRON TECHNOLOGY ]
