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MT48LC4M16A2P-75G 参数 Datasheet PDF下载

MT48LC4M16A2P-75G图片预览
型号: MT48LC4M16A2P-75G
PDF下载: 下载PDF文件 查看货源
内容描述: SDR SDRAM MT48LC16M4A2 â ????梅格4 ×4× 4银行MT48LC8M8A2 â ???? 2梅格×8× 4银行MT48LC4M16A2 â ???? 1梅格×16× 4银行 [SDR SDRAM MT48LC16M4A2 – 4 Meg x 4 x 4 Banks MT48LC8M8A2 – 2 Meg x 8 x 4 Banks MT48LC4M16A2 – 1 Meg x 16 x 4 Banks]
分类和应用: 动态存储器
文件页数/大小: 83 页 / 3595 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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64Mb: x4, x8, x16 SDRAM  
Electrical Specifications – AC Operating Conditions  
Electrical Specifications – AC Operating Conditions  
Table 12: Electrical Characteristics and Recommended AC Operating Conditions  
Notes 1–5 apply to all parameters and conditions  
-6A6, 7  
-6  
-7E  
-75  
Note  
Max Unit s  
Parameter  
Symbol  
tAC(3)  
tAC(2)  
tAC(1)  
tAH  
Min  
Max  
5.4  
7.5  
17  
Min  
Max  
5.5  
7.5  
17  
Min  
Max  
Min  
Access time from CL = 3  
CLK (positive  
edge)  
5.4  
5.4  
5.4  
6
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
8
8
8
CL = 2  
CL = 1  
Address hold time  
Address setup time  
0.8  
1.5  
2.5  
2.5  
6
1
0.8  
1.5  
2.5  
2.5  
7
0.8  
1.5  
2.5  
2.5  
7.5  
10  
tAS  
1.5  
2.5  
2.5  
6
CLK high-level width  
CLK low-level width  
tCH  
tCL  
Clock cycle time  
CL = 3  
tCK(3)  
tCK(2)  
tCK(1)  
tCKH  
tCKS  
9
9
9
CL = 2  
CL = 1  
10  
20  
0.8  
1.5  
0.8  
10  
20  
1
7.5  
CKE hold time  
CKE setup time  
0.8  
1.5  
0.8  
0.8  
1.5  
0.8  
1.5  
1
CS#, RAS#, CAS#, WE#,  
DQM hold time  
tCMH  
CS#, RAS#, CAS#, WE#,  
DQM setup time  
tCMS  
1.5  
1.5  
1.5  
1.5  
ns  
Data-in hold time  
tDH  
tDS  
tHZ(3)  
tHZ(2)  
tHZ(1)  
tLZ  
0.8  
1.5  
1
1.5  
0.8  
1.5  
0.8  
1.5  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Data-in setup time  
Data-out High-Z CL = 3  
time  
5.4  
7.5  
17  
5.5  
7.5  
17  
5.4  
5.4  
5.4  
6
10  
10  
10  
CL = 2  
CL = 1  
Data-out Low-Z time  
1
1
1
1
Data-out hold time  
(load)  
tOH  
3
2
3
3
Data-out hold time (no  
load)  
tOHn  
tRAS  
tRC  
1.8  
42  
60  
18  
1.8  
42  
60  
18  
1.8  
37  
60  
15  
1.8  
44  
66  
20  
ns  
11  
12  
ACTIVE-to-PRECHARGE  
command  
120,000  
120,000  
120,000  
120,000 ns  
ACTIVE-to-ACTIVE com-  
mand period  
ns  
ns  
ACTIVE-to-READ or  
WRITE delay  
tRCD  
tREF  
Refresh period (4096  
rows)  
Refresh period – automo- tREFAT  
tive (4096 rows)  
64  
16  
64  
16  
64  
16  
64  
16  
ms  
ms  
ns  
AUTO REFRESH period  
tRFC  
60  
60  
66  
66  
PDF: 09005aef80725c0b  
64mb_x4x8x16_sdram.pdf - Rev. U 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
23  
© 1999 Micron Technology, Inc. All rights reserved.