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MT48LC4M16A2P-75G 参数 Datasheet PDF下载

MT48LC4M16A2P-75G图片预览
型号: MT48LC4M16A2P-75G
PDF下载: 下载PDF文件 查看货源
内容描述: SDR SDRAM MT48LC16M4A2 â ????梅格4 ×4× 4银行MT48LC8M8A2 â ???? 2梅格×8× 4银行MT48LC4M16A2 â ???? 1梅格×16× 4银行 [SDR SDRAM MT48LC16M4A2 – 4 Meg x 4 x 4 Banks MT48LC8M8A2 – 2 Meg x 8 x 4 Banks MT48LC4M16A2 – 1 Meg x 16 x 4 Banks]
分类和应用: 动态存储器
文件页数/大小: 83 页 / 3595 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第17页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第18页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第19页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第20页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第22页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第23页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第24页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第25页  
64Mb: x4, x8, x16 SDRAM  
Electrical Specifications – IDD Parameters  
Electrical Specifications – IDD Parameters  
Table 10: IDD Specifications and Conditions – Revision G  
Notes 1–3 apply to all parameters and conditions; VDD/VDDQ = 3.3V ±0.3V  
Max  
-7E  
Parameter/Condition  
Symbol  
-6  
-75  
Unit Notes  
Operating current: Active mode; Burst = 2; READ or WRITE;  
tRC tRC (MIN)  
IDD1  
150  
125  
115  
mA 4, 5, 6, 7  
Standby current: Power-down mode; All banks idle; CKE =  
LOW  
IDD2  
IDD3  
IDD4  
2
2
2
mA  
7
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All  
banks active after tRCD met; No accesses in progress  
60  
45  
45  
mA 4, 6, 7, 8  
mA 4, 5, 6, 7  
mA 4, 5, 6, 7,  
Operating current: Burst mode; Page burst; READ or WRITE;  
All banks active  
180  
150  
140  
Auto refresh current: CKE = HIGH; CS# =  
HIGH  
tRFC = tRFC (MIN)  
tRFC = 15.625μs  
IDD5  
IDD6  
IDD6  
250  
3
230  
3
210  
3
8, 9  
mA  
tRFC = 3.906μs  
6
6
6
mA  
(AT)  
Self refresh current: CKE 0.2V  
Standard  
IDD7  
IDD7  
1
1
1
mA  
mA  
10  
Low power (L)  
0.5  
0.5  
0.5  
Table 11: IDD Specifications and Conditions – Revision J  
Notes 1–3 apply to all parameters and conditions; VDD/VDDQ = 3.3V ±0.3V  
Max  
-7E  
Parameter/Condition  
Symbol  
-6A  
-75  
Unit Notes  
Operating current: Active mode; Burst = 2; READ or WRITE;  
tRC tRC (MIN)  
IDD1  
100  
100  
100  
mA 4, 5, 6, 7  
Standby current: Power-down mode; All banks idle; CKE =  
LOW  
IDD2  
IDD3  
IDD4  
2.5  
35  
2.5  
35  
2.5  
35  
mA  
7
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All  
banks active after tRCD met; No accesses in progress  
mA 4, 6, 7, 8  
mA 4, 5, 6, 7  
mA 4, 5, 6, 7,  
Operating current: Burst mode; Page burst; READ or WRITE;  
All banks active  
100  
100  
100  
Auto refresh current: CKE = HIGH; CS# =  
HIGH  
tRFC = tRFC (MIN)  
tRFC = 15.625μs  
IDD5  
IDD6  
IDD6  
150  
4
150  
4
150  
4
8, 9  
mA  
tRFC = 3.906μs  
6
6
6
mA  
(AT)  
Self refresh current: CKE 0.2V  
Standard  
IDD7  
3
3
3
mA  
10  
1. All voltages referenced to VSS.  
Notes:  
2. Minimum specifications are used only to indicate cycle time at which proper operation  
over the full temperature range is ensured:  
0°C TA +70°C (commercial)  
–40°C TA +85°C (industrial)  
PDF: 09005aef80725c0b  
64mb_x4x8x16_sdram.pdf - Rev. U 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
21  
© 1999 Micron Technology, Inc. All rights reserved.