64Mb: x4, x8, x16 SDRAM
Temperature and Thermal Impedance
Table 6: Thermal Impedance Simulated Values
Θ JA (°C/W)
Airflow =
Θ JA (°C/W)
Airflow =
Θ JA (°C/W)
Airflow =
2m/s
Die
Revision
Package
Substrate
0m/s
1m/s
Θ JB (°C/W) Θ JC (°C/W)
G
54-pin TSOP
High Con-
ductivity
70.5
80.6
61.2
67.7
57.1
105.6
93.5
81.9
66.3
57.2
61.5
53.5
98.1
88.8
81.9
62.7
54.6
46.1
45.7
89.5
87.6
69.5
60.7
13.7
54-ball VFBGA
54-pin TSOP
Low Con-
ductivity
4.9
High Con-
ductivity
63.96
122.3
101.9
96.9
J
Low Con-
ductivity
20.7
11.5
High Con-
ductivity
54-ball VFBGA
Low Con-
ductivity
High Con-
ductivity
74.0
1. For designs expected to last beyond the die revision listed, contact Micron Applications
Engineering to confirm thermal impedance values.
Notes:
2. Thermal resistance data is sampled from multiple lots, and the values should be viewed
as typical.
3. These are estimates; actual results may vary.
Figure 8: Example: Temperature Test Point Location, 54-Pin TSOP (Top View)
22.22mm
11.11mm
Test point
10.16mm
5.08mm
1. Package may or may not be assembled with a location notch.
Note:
PDF: 09005aef80725c0b
64mb_x4x8x16_sdram.pdf - Rev. U 05/13 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
17
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