1Gb: x4, x8, x16 DDR2 SDRAM
Input Electrical Characteristics and Operating Conditions
Input Electrical Characteristics and Operating Conditions
Table 14: Input DC Logic Levels
All voltages are referenced to VSS
Parameter
Symbol
VIH(DC)
VIL(DC)
Min
VREF(DC) + 125
–300
Max
Units
mV
1
Input high (logic 1) voltage
Input low (logic 0) voltage
VDDQ
VREF(DC) - 125
mV
1. VDDQ + 300mV allowed provided 1.9V is not exceeded.
Note:
Table 15: Input AC Logic Levels
All voltages are referenced to VSS
Parameter
Symbol
VIH(AC)
VIH(AC)
VIL(AC)
Min
VREF(DC) + 250
VREF(DC) + 200
–300
Max
Units
mV
1
Input high (logic 1) voltage (-37E/-5E)
VDDQ
VDDQ
1
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)
Input low (logic 0) voltage (-37E/-5E)
mV
VREF(DC) - 250
VREF(DC) - 200
mV
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)
VIL(AC)
–300
mV
1. Refer to AC Overshoot/Undershoot Specification (page 53).
Note:
Figure 12: Single-Ended Input Signal Levels
1,150mV
VIH(AC)
1,025mV
VIH(DC)
936mV
918mV
900mV
882mV
864mV
VREF + AC noise
VREF + DC error
VREF - DC error
VREF - AC noise
775mV
VIL(DC)
650mV
VIL(AC)
1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.
Note:
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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