1Gb: x4, x8, x16 DDR2 SDRAM
ODT DC Electrical Characteristics
ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to VSS
Parameter
Symbol
Min
Nom
Max
Units
Notes
RTT1(EFF)
60
75
90
1, 2
RTT effective impedance value for 75Ω setting
Ω
EMR (A6, A2) = 0, 1
RTT2(EFF)
RTT3(EFF)
ΔVM
120
40
150
50
–
180
60
6
1, 2
1, 2
3
RTT effective impedance value for 150Ω setting
EMR (A6, A2) = 1, 0
Ω
Ω
RTT effective impedance value for 50Ω setting
EMR (A6, A2) = 1, 1
Deviation of VM with respect to VDDQ/2
–6
%
1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL(DC) to the ball
being tested, and then measuring current, I(VIH[AC]), and I(VIL[AC]), respectively.
Notes:
2. Minimum IT and AT device values are derated by six percent when the devices operate
between –40°C and 0°C (TC ).
3. Measure voltage (VM) at tested ball with no load.
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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