1Gb: x4, x8, x16 DDR3 SDRAM
ODT Characteristics
ODT Resistors
Table 32 (page 58) provides an overview of the ODT DC electrical characteristics. The
values provided are not specification requirements; however, they can be used as design
guidelines to indicate what RTT is targeted to provide:
• RTT ꢂꢃꢄΩ is made up of RTT12±(PD24±) and RTT12±(PU24±)
• RTT ꢅꢄΩ is made up of RTT6±(PD12±) and RTT6±(PU12±)
• RTT ꢆꢄΩ is made up of RTT4±(PD8±) and RTT4±(PU8±)
• RTT ꢇꢄΩ is made up of RTT3±(PD6±) and RTT3±(PU6±)
• RTT ꢃꢄΩ is made up of RTT2±(PD4±) and RTT2±(PU4±)
Table 32: RTT Effective Impedances
MR1
[9, 6, 2]
RTT
Resistor
VOUT
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
VIL(AC) to VIH(AC)
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
VIL(AC) to VIH(AC)
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
VIL(AC) to VIH(AC)
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
VIL(AC) to VIH(AC)
Min
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
Nom
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
Unit
0, 1, 0
ꢂꢃꢄΩ
RTT120(PD240)
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/4
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/6
RZQ/4
RZQ/4
RZQ/4
RZQ/4
RZQ/4
RZQ/4
RZQ/8
RTT120(PU240)
ꢂꢃꢄΩ
RTT60(PD120)
0, 0, 1
0, 1, 1
1, 0, 1
ꢅꢄΩ
ꢆꢄΩ
ꢇꢄΩ
RTT60(PU120)
ꢅꢄΩ
RTT40(PD80)
RTT40(PU80)
ꢆꢄΩ
RTT30(PD60)
RTT30(PU60)
ꢇꢄΩ
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
58
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