1Gb: x4, x8, x16 DDR3 SDRAM
ODT Characteristics
Table 32: RTT Effective Impedances (Continued)
MR1
[9, 6, 2]
RTT
Resistor
VOUT
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
VIL(AC) to VIH(AC)
Min
0.6
0.9
0.9
0.9
0.9
0.6
0.9
Nom
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max
1.1
1.1
1.4
1.4
1.1
1.1
1.6
Unit
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/12
1, 0, 0
ꢃꢄΩ
RTT20(PD40)
RTT20(PU40)
ꢃꢄΩ
1. Values assume an RZQ of 240Ω ꢈrꢂꢉꢀꢁ
Note:
ODT Sensitivity
If either the temperature or voltage changes after I/O calibration, then the tolerance
limits listed in Table 31 (page 50) and Table 32 can be expected to widen according to
Table 33 and Table 34 (page 59).
Table 33: ODT Sensitivity Definition
Symbol
Min
Max
Unit
RTT
0.9 - dRTTdT × |DT| - dRTTdV × |DV|
1.6 + dRTTdT × |DT| + dRTTdV × |DV|
RZQ/(2, 4, 6, 8, 12)
1. ΔT = T - T(@ calibration), ΔV = VDDQ - VDDQ(@ calibration) and VDD = VDDQ
.
Note:
Table 34: ODT Temperature and Voltage Sensitivity
Change
dRTTdT
dRTTdV
Min
Max
1.5
Unit
%/°C
0
0
0.15
%/mV
1. ΔT = T - T(@ calibration), ΔV = VDDQ - VDDQ(@ calibration) and VDD = VDDQ
.
Note:
ODT Timing Definitions
ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 24. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another de-
fines when ODT turns on or off dynamically. Table 35 outlines and provides definition
and measurement references settings for each parameter (see Table 36 (page 6±)).
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.
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1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
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