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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT41J256M4的Datasheet PDF文件第57页浏览型号MT41J256M4的Datasheet PDF文件第58页浏览型号MT41J256M4的Datasheet PDF文件第59页浏览型号MT41J256M4的Datasheet PDF文件第60页浏览型号MT41J256M4的Datasheet PDF文件第62页浏览型号MT41J256M4的Datasheet PDF文件第63页浏览型号MT41J256M4的Datasheet PDF文件第64页浏览型号MT41J256M4的Datasheet PDF文件第65页  
1Gb: x4, x8, x16 DDR3 SDRAM  
ODT Characteristics  
Figure 25: tAON and tAOF Definitions  
t
AON  
Begin point: Rising edge of CK - CK#  
defined by the end point of ODTLon  
t
AOF  
Begin point: Rising edge of CK - CK#  
defined by the end point of ODTLoff  
CK  
CK  
V
/2  
DDQ  
CK#  
CK#  
t
t
AOF  
AON  
End point: Extrapolated point at V  
RTT,nom  
T
V
SW2  
RTT,nom  
T
SW1  
T
SW1  
DQ, DM  
T
SW1  
DQS, DQS#  
TDQS, TDQS#  
V
V
SW2  
SW2  
V
V
V
SW1  
SW1  
SSQ  
V
SSQ  
End point: Extrapolated point at V  
SSQ  
Figure 26: tAONPD and tAOFPD Definitions  
t
t
AONPD  
AOFPD  
Begin point: Rising edge of CK - CK#  
with ODT first registered high  
Begin point: Rising edge of CK - CK#  
with ODT first registered low  
CK  
CK  
VDDQ/2  
CK#  
CK#  
t
t
AONPD  
TSW2  
AOFPD  
End point: Extrapolated point at VRTT,nom  
VRTT,nom  
TSW2  
TSW1  
TSW1  
DQ, DM  
DQS, DQS#  
TDQS, TDQS#  
VSW2  
VSW2  
VSW1  
VSW1  
VSSQ  
VSSQ  
End point: Extrapolated point at VSSQ  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
61  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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