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MT28F322D18FH-80BET 参数 Datasheet PDF下载

MT28F322D18FH-80BET图片预览
型号: MT28F322D18FH-80BET
PDF下载: 下载PDF文件 查看货源
内容描述: FL灰内存 [FLASH MEMORY]
分类和应用:
文件页数/大小: 44 页 / 519 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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2 MEG x 16  
ASYNC/PAGE/BURST FLASH MEMORY  
COMMAND STATE MACHINE (CSM)  
Commands are issued to the command state ma-  
chine (CSM) using standard microprocessor write tim-  
ings. The CSM acts as an interface between external  
microprocessors and the internal write state machine  
(WSM). The available commands are listed in Table 3,  
their definitions are given in Table 4, and their descrip-  
tions in Table 5. Program and erase algorithms are  
automated by an on-chip WSM. (For more specific  
information about the CSM transition states, see Micron  
technical note TN-28-33, “Command State Machine De-  
scription and Command Definition.”  
Once a valid PROGRAM/ERASE command is entered,  
the WSM executes the appropriate algorithm, which gen-  
erates the necessary timing signals to control the device  
internallytoaccomplishtherequestedoperation. Acom-  
mand is valid only if the exact sequence of WRITEs is  
completed. After the WSM completes its task, the WSM  
statusbit(SR7)(seeTable7)issettoalogicIGlevel(1),  
allowing the CSM to respond to the full command set  
again.  
CE#, ADV#, and OE# must be at a logic LOW level (VIL),  
and WE# and RST# must be at logic ꢁIGꢁ (VIꢁ).  
Table6illustratesthebusoperationsforallthemodes:  
write, read, reset, standby, and output disable.  
When the device is powered up, internal reset cir-  
cuitry initializes the chip to a read array mode of opera-  
tion. Changing the mode of operation requires that a  
command code be entered into the CSM. For each one of  
the two memory partitions, an on-chip status register is  
available. These two registers allow the progress of the  
various operations that can take place on a memory bank  
to be monitored. One of the two status registers is inter-  
rogated by entering a READ STATUS REGISTER com-  
mandontotheCSM(cycle1),specifyinganaddresswithin  
the memory partition boundary, and reading the register  
data on I/Os DQ0–DQ7 (cycle 2). Status register bits SR0-  
SR7 correspond to DQ0–DQ7 (see Table 7).  
COMMAND DEFINITION  
Once a specific command code has been entered, the  
WSM executes an internal algorithm, generating the nec-  
essary timing signals to program, erase, and verify data.  
See Table 4 for the CSM command definitions and data  
for each of the bus cycles.  
OPERATIONS  
Device operations are selected by entering a standard  
JEDEC 8-bit command code with conventional micro-  
processor timings into an on-chip CSM through I/Os  
DQ0–DQ7. The number of bus cycles required to activate  
a command is typically one or two. The first operation is  
always a WRITE. Control signals CE#, ADV#, and WE#  
must be at a logic LOW level (VIL), and OE# and RST#  
must be at logic ꢁIGꢁ (VIꢁ). The second operation, when  
needed, can be a WRITE or a READ depending upon the  
command. During a READ operation, control signals  
STATUS REGISTER  
The status register allows the user to determine  
whether the state of a PROGRAM/ERASE operation is  
pending or complete. The status register is monitored by  
toggling OE# and CE# and reading the resulting status  
codeonI/OsDQ0–DQ7.Thehigh-orderI/Os(DQ8–DQ15)  
Table 3  
Command State Machine Codes For Device Mode Selection  
COMMAND DQ0–DQ7  
CODE ON DEVICE MODE  
40h/10h  
20h  
Program setup/alternate program setup  
Block erase setup  
50h  
Clear status register  
60h  
Protection configuration setup  
Set read configuration register  
Read status register  
60h  
70h  
90h  
Read protection configuration register  
Read query  
98h  
B0h  
C0h  
D0h  
FFh  
Program/erase suspend  
Protection register program/lock  
Program/erase resume – erase confirm  
Read array  
2 Meg x 16 Async/Page/Burst Flash Memory  
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002, Micron Technology, Inc.  
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