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MT28F322D18FH-80BET 参数 Datasheet PDF下载

MT28F322D18FH-80BET图片预览
型号: MT28F322D18FH-80BET
PDF下载: 下载PDF文件 查看货源
内容描述: FL灰内存 [FLASH MEMORY]
分类和应用:
文件页数/大小: 44 页 / 519 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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2 MEG x 16  
ASYNC/PAGE/BURST FLASH MEMORY  
Table 5  
Command Descriptions  
CODE DEVICE MODE  
10h Alt. Program Setup  
20h Erase Setup  
BUS CYCLE  
First  
DESCRIPTION  
Operates the same as PROGRAM SETUP command  
First  
Prepares the CSM for the ERASE CONFIRM command. If the next  
command is not an ERASE CONFIRM command, the command will be  
ignored, and the bank will go to read status mode and wait for  
another command.  
40h Program Setup  
First  
A two-cycle command: The first cycle prepares for a PROGRAM  
operation, and the second cycle latches addresses and data and  
initiates the WSM to execute the program algorithm. The flash outputs  
status register data on the rising edge of ADV#, or on the rising clock  
edge when ADV# is LOW during synchronous burst mode, or on the  
falling edge of OE# or CE#, whichever occurs first.  
50h Clear Status  
Register  
First  
First  
The WSM can set the block lock status (SR1), VPP status (SR3), program  
status (SR4), and erase status (SR5) bits in the status register to “1,” but  
it cannot clear them to “0.” Issuing this command clears those bits to  
“0.”  
60h Protection  
Configuration  
Setup  
Prepares the CSM for changes to the block locking status. If the next  
command is not BLOCK UNLOCK, BLOCK LOCK or BLOCK LOCK DOWN  
the command will be ignored, and the device will go to read status  
mode.  
Set Read  
Configuration  
Register  
First  
First  
Puts the device into the set read configuration mode so that it will  
be possible to set the option bits related to burst read mode.  
70h Read Status  
Register  
This command places the device into a read status register mode.  
Reading the device will output the contents of the status register for  
the addressed bank. The device will automatically enter this mode for  
the addressed bank after a PROGRAM or ERASE operation has been  
initiated.  
90h Read Protection  
Configuration  
First  
Puts the device into the read protection configuration mode so that  
reading the device will output the manufacturer/device codes, block  
lock status, protection register, or protection register lock status.  
98h Read Query  
First  
First  
Puts the device into the read query mode so that reading the device  
will output common flash interface information.  
B0h Program/Erase  
Suspend  
Issuing this command will suspend the currently executing PROGRAM/  
ERASE operation. The status register will indicate when the  
operation has been successfully suspended by setting either the  
program suspend (SR2) or erase suspend (SR6), and the WSM status bit  
(SR7) to a “1” (ready). The WSM will continue to idle in the suspend  
state, regardless of the state of all input control signals except RST#,  
which will immediately shut down the WSM and the remainder of the  
chip if RST# is driven to VIL.  
C0h Program Device  
Protection Register  
First  
First  
Writes a specific code into the device protection register.  
Lock Device  
Locks the device protection register; data can no longer be changed.  
Protection Register  
(continued on next page)  
2 Meg x 16 Async/Page/Burst Flash Memory  
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
11  
©2002, Micron Technology, Inc.  
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