512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Se ria l Pre se n ce -De t e ct
Ta b le 19:
Se ria l Pre se n ce -De t e ct Ma t rix (co n t in u e d )
512MB1
1GB
2GB
Byt e
De scrip t io n
En t ry (Ve rsio n )
MIN row precharge time, tRP
27
-80E
-800/-667
-53E/-40E
–
–
3C
32
3C
3C
32
3C
3C
MIN row active-to-row active, tRRD
MIN RAS#-to-CAS# delay, tRCD
28
29
–
1E
1E
1E
-80E
-800/-667
-53E/-40E
–
–
3C
32
3C
3C
32
3C
3C
t
30
-80E/-800
-667/-53E
-40E
–
2D
2D
28
2D
2D
28
MIN active-to-precharge, RAS
–/2D
28
31
32
512MB, 1GB, 2GB
80
01
02
Module rank density
Address and command setup time, tISb
-80E/-800
-667
–
–
25
35
17
20
25
35
17
20
25
35
-53E
-40E
Address and command hold time, tIHb
33
-80E/-800
-667
–
–
37
47
25
27
37
47
25
27
37
47
-53E
-40E
Data/data mask input setup time, tDSb
Data/data mask input hold time, tDHb
34
35
-80E/-800
-667/-53E
-40E
–
–/10
15
05
10
15
05
10
15
-80E/-800
-667
–
–
22
27
12
17
22
27
12
17
22
27
-53E
-40E
t
36
37
–
3C
3C
3C
Write recovery time, WR
t
-80E/-667/-53E
-800/-40E
–/–/1E
28
1E
28
1E
28
WRITE-to-READ command delay, WTR
38
–
1E
1E
1E
READ-to-PRECHARGE command delay,
tRTP
39
40
–
00
00
00
Memory analysis probe
-80E
-800/-667
-53E/-40E
–
00
00
30
00
00
36
06
06
Extension for bytes 41 and 42
t
MIN active-to-active/refresh time, RC2
41
-80E
-800/-667/-53E
-40E
–
39
3C
37
39
3C
37
–/–/3C
37
42
43
44
4B
69
7F
MIN AUTO REFRESH-to-ACTIVE/
AUTO REFRESH command period, RFC
SDRAM device MAX cycle time, tCK
(MAX)
t
80
80
80
-80E/-800
-667
–
–
1E
23
14
18
1E
23
14
18
1E
23
SDRAM device MAX DQS–DQ skew time,
tDQSQ
-53E
-40E
45
46
-80E/-800
-667
–
–
28
2D
1E
22
28
2D
1E
22
28
2D
SDRAM device MAX read data hold
skew factor, tQHS
-53E
-40E
0F
0F
0F
PLL relock time
PDF: 09005aef80e5e752/Source: 09005aef80e5e626
HTF18C64_128_256x72.fm - Rev. E 3/07 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
16
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