8, 16, 32 MEG x 64
NONBUFFERED DRAM DIMMs
SERIAL PRESENCE-DETECT EEPROM OPERATING CONDITIONS
(Notes: 1) (VDD = +3.3V 0.3V)
PARAMETER/CONDITION
SYMBOL
VDD
VIH
MIN
MAX
UNITS NOTES
SUPPLYVOLTAGE
3
3.6
V
V
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
OUTPUT LOW VOLTAGE: IOUT = 3mA
INPUT LEAKAGE CURRENT: VIN =GNDtoVDD
OUTPUTLEAKAGECURRENT:VOUT =GNDtoVDD
VDD x 0.7 VDD + 0.5
VIL
-1
–
VDD x 0.3
V
VOL
ILI
0.4
10
10
30
V
–
µA
µA
µA
ILO
–
STANDBYCURRENT:
ISB
–
SCL = SDA = VDD - 0.3V; All other inputs = GND or 3.3V +10%
POWERSUPPLYCURRENT:
ICC
–
2
mA
SCL clock frequency = 100 KHz
SERIAL PRESENCE-DETECT EEPROM AC ELECTRICAL CHARACTERISTICS
(Notes: 1) (VDD = +3.3V 0.3V)
PARAMETER/CONDITION
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-outholdtime
SDA and SCL fall time
Data-in hold time
SYMBOL
MIN
0.3
4.7
MAX
UNITS NOTES
t
AA
3.5
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
KHz
ns
µs
µs
t
BUF
t
DH
300
t
F
300
100
t
HD:DAT
HD:STA
0
4
4
t
Start condition hold time
ClockHIGHperiod
t
HIGH
t
Noise suppression time constant at SCL, SDA inputs
ClockLOWperiod
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
I
t
LOW
4.7
t
R
SCL
1
100
t
t
SU:DAT
SU:STA
250
4.7
4.7
t
t
SU:STO
t
WR
10
ms
28
8, 16, 32 Meg x 64 Nonbuffered DRAM DIMMs
DM78.p65 – Rev. 2/99
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©1999,MicronTechnology,Inc.
13
MICRON [ MICRON TECHNOLOGY ]
