512Mb, 1Gb, 2Gb: P30-65nm
DC Electrical Specifications
Table 35: DC Current Characteristics (Continued)
CMOS Inputs
(VCCQ = 1.7–
3.6V)
TTL Inputs
(VCCQ = 2.4–
3.6V)
Parameter
Symbol Typ
Max
0.1
Typ
Max Unit Test Conditions
Notes
VPP erase current
IPPE
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.1
0.1
0.1
0.1
mA VPP = VPPL, erase in progress
VPP = VPPH, erase in progress
mA VPP = VPPL
3
0.1
VPP blank check
IPPBC
0.1
3
0.1
VPP = VPPH
1. All currents are RMS unless noted. Typical values at TYP VCC, TC = +25°C.
Notes:
2. ICCS is the average current measured over any 5ms time interval 5µs after CE# is de-asser-
ted.
3. Sampled, not 100% tested.
4. ICCES is specified with the device deselected. If device is read while in erase suspend, cur-
rent is ICCES plus ICCR
.
5. ICCW, ICCE measured over TYP or MAX times specified in (page 0 ).
6. if VIN > VCC, the input load current increases to 10µA MAX.
7. the IPPS, PPWS, PPES
I
I
will increase to 200µA when VPP/WP# is at VPPH
.
Table 36: DC Voltage Characteristics
CMOS Inputs
TTL Inputs1
(VCCQ = 1.7–3.6V)
(VCCQ = 2.4–3.6V)
Parameter
Symbol
VIL
Min
Max
Min
–0.5
2
Max
0.6
Unit Test Conditions
Notes
Input low voltage
Input high voltage
Output low voltage
–0.5
0.4
V
V
2
VIH
VCCQ - 0.4 VCCQ + 0.5
VCCQ + 0.5
0.2
VOL
–
VCCQ - 0.2
–
0.2
–
V
V
V
VCC = VCC (MIN)
VCCQ = VCCQ (MIN)
IOL = 100µA
Output high voltage
VPP lock out voltage
VOH
–
VCCQ – 0.2
–
VCC = VCC (MIN)
VCCQ = VCCQ (MIN)
IOH = –100µA
VPPLK
0.4
–
0.4
3
1. Synchronous read mode is not supported with TTL inputs.
Notes:
2. VIL can undershoot to –1.0V for durations of 2ns or less and VIH can overshoot to VCCQ
1.0V for durations of 2ns or less.
+
3. VPP ≤ VPPLK inhibits ERASE and PROGRAM operations. Do not use VPPL and VPPH outside
their valid ranges.
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