512Mb, 1Gb, 2Gb: P30-65nm
Maximum Ratings and Operating Conditions
Maximum Ratings and Operating Conditions
Stresses greater than those listed can cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated is not guaranteed.
Table 33: Maximum Ratings
Parameter
Maximum Rating
–40°C to + 85 °C
–65°C to + 125 °C
–2V to +5.6V
–2V to +11.5V
–2V to +4V
Notes
Temperature under bias
Storage temperature
Voltage on any signal (except VCC, VPP, and VCCQ
VPP voltage
)
1
1, 2
1
VCC voltage
VCCQ voltage
–2V to +5.6V
100mA
1
Output short circuit current
3
1. Voltages shown are specified with respect to VSS. During infrequent nonperiodic transi-
Notes:
tions, the level may undershoot to –2V for periods less than 20ns or overshoot to VCC
2V or VCCQ + 2V or VPP + 2V for periods less than 20ns.
+
2. Program/erase voltage is typically 1.7–2.0V. 9.0V can be applied for 80 hours maximum
total, to any blocks for 1000 cycles maximum. 9.0V program/erase voltage may reduce
block cycling capability.
3. Output is shorted for no more than one second, and more than one output is not shor-
ted at one time.
Table 34: Operating Conditions
Symbol
TA
Parameter
Min
–40
1.7
Max
+85
2.0
3.6
3.6
3.6
9.5
80
Unit Notes
Operating temperature
VCC supply voltage
I/O supply voltage
°C
V
1
VCC
VCCQ
CMOS inputs
TTL inputs
1.7
2.4
VPPL
VPPH
tPPH
VPP voltage supply (logic level)
0.9
2
Buffered enhanced factory programming VPP
Maximum VPP hours
8.5
VPP = VPPH
VPP = VPPL
VPP = VPPH
–
Hours
Cycles
BLOCK
ERASE cycles
Array blocks
100,000
–
–
1000
1. TA = ambient temperature.
Notes:
2. In typical operation, VPP program voltage is VPPL
.
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p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
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