512Mb, 1Gb, 2Gb: P30-65nm
DC Electrical Specifications
DC Electrical Specifications
Table 35: DC Current Characteristics
CMOS Inputs
(VCCQ = 1.7–
3.6V)
TTL Inputs
(VCCQ = 2.4–
3.6V)
Parameter
Symbol Typ
Max
Typ
Max Unit Test Conditions
Notes
Input load current 512Mb
1Gb
ILI
–
±1
–
±2
µA VCC = VCC (MAX)
VCCQ = VCCQ (MAX)
VIN = VCCQ or VSS
1, 6
2Gb
–
–
±2
±1
–
–
±4
Output leakage
current
512Mb
1Gb
ILO
±10
µA VCC = VCC (MAX)
VCCQ = VCCQ (MAX)
VIN = VCCQ or VSS
DQ[15:0], WAIT
2Gb
–
±2
–
±20
225
240
480
VCC standby,
power-down
512Mb
1Gb
ICCS
ICCD
,
70
225
240
480
70
µA VCC = VCC (MAX)
VCCQ = VCCQ (MAX)
CE# = VCCQ
1. 2
75
75
2Gb
150
150
RST# = VCCQ (for ICCS
)
RST# = VSS (for ICCD
WP# = VIH
)
Average Asynchronous
VCC read single-word
current f = 5 MHz (1 CLK)
ICCR
26
12
19
16
31
16
22
18
26
12
19
16
31
16
22
18
mA 16-word read VCC = VCC (MAX)
1
CE# = VIL
OE# = VIH
mA 8-word read
Inputs:
mA 16-word read
Page mode read
f = 13 MHz (17 CLK)
mA 16-word read
VIL or VIH
Synchronous burst
f = 52 MHz, LC = 4
21
35
35
24
50
50
21
35
35
24
50
50
mA Continuous
read
VCC program current,
VCC erase current
ICCW,
ICCE
mA VPP = VPPL
program/erase in progress
VPP = VPPH
program/erase in progress
µA CE# = VCCQ, suspend in progress 1, 3, 4
,
1, 3, 5
,
1, 3, 5
VCC program sus-
pend current,
VCC erase suspend
current
512Mb
ICCWS,
ICCES
70
75
225
240
70
75
225
240
1Gb
2Gb
VPP standby current 512Mb
IPPS
0.2
0.2
0.4
0.2
5
5
0.2
0.2
0.4
0.2
5
5
µA VPP = VPPL
,
1, 3, 7
1, 3, 7
in standby mode
1Gb
2Gb
10
5
10
5
VPP program suspend current,
VPP erase suspend current
µA VPP = VPPL
,
IPPWS,
IPPES
suspend in progress
VPP read
IPPR
2
15
0.1
0.1
2
15
0.1
0.1
µA VPP = VPPL
1, 3
3
VPP program current
IPPW
0.05
0.05
0.05
0.05
mA VPP = VPPL, program in progress
VPP = VPPH, program in progress
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
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