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JS28F256P30TFE 参数 Datasheet PDF下载

JS28F256P30TFE图片预览
型号: JS28F256P30TFE
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB和512MB (256 / 256MB ) , P30-65nm [256Mb and 512Mb (256Mb/256Mb), P30-65nm]
分类和应用:
文件页数/大小: 95 页 / 1351 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
AC Read Specifications  
Figure 33: Synchronous Single Word Array or Nonarray Read  
tAVCH  
tCHAX  
tAVQV  
CLK  
A
tAVVH  
tVHVL  
tELCH  
tVHAX  
tVLVH  
ADV#  
tELVH  
tELQV  
tEHQZ  
tGHQZ  
CE#  
OE#  
tGLQX  
tCHTV  
tCHQV  
tGHTZ  
tCHTX  
WAIT  
tGLQV  
tCHQX  
DQ  
1. WAIT is driven per OE# assertion during synchronous array or non-array read, and can  
be configured to assert either during or one data cycle before valid data.  
Notes:  
2. This diagram illustrates the case in which an n-word burst is initiated to the flash memo-  
ry array and it is terminated by CE# deassertion after the first word in the burst.  
PDF: 09005aef84566799  
p30_65nm_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
86  
© 2013 Micron Technology, Inc. All rights reserved.  
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